Bipolar Transistor Basics

In the Diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics. If we now join together two individual signal diodes back-to-back, this will give us two PN-junctions connected together in series that share a common P or N terminal. The fusion of these two diodes produces a three layer, two junction, three terminal device forming the basis of a Bipolar Junction Transistor, or BJT for short.

Transistors are three terminal active devices made from different semiconductor materials that can act as either an insulator or a conductor by the application of a small signal voltage. The transistor’s ability to change between these two states enables it to have two basic functions: “switching” (digital electronics) or “amplification” (analogue electronics). Then Bipolar Transistors have the ability to operate within three different regions:

  • • Active Region   –   the transistor operates as an amplifier and Ic = β.Ib
  • • Saturation   –   the transistor is “Fully-ON” operating as a switch and Ic = I(saturation)
  • • Cut-off   –   the transistor is “Fully-OFF” operating as a switch and Ic = 0
bipolar transistor

A Typical
Bipolar Transistor

The word Transistor is an acronym, and is a combination of the words Transfer Varistor used to describe their mode of operation way back in their early days of development. There are two basic types of bipolar transistor construction, PNP and NPN, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are made.

The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting terminals with each terminal being given a name to identify it from the other two. These three terminals are known and labelled as the Emitter ( E ), the Base ( B ) and the Collector ( C ) respectively.

Bipolar Transistors are current regulating devices that control the amount of current flowing through them in proportion to the amount of biasing voltage applied to their base terminal acting like a current-controlled switch. The principle of operation of the two transistor types PNP and NPN, is exactly the same the only difference being in their biasing and the polarity of the power supply for each type.

Bipolar Transistor Construction

bipolar transistor construction


The construction and circuit symbols for both the PNP and NPN bipolar transistor are given above with the arrow in the circuit symbol always showing the direction of “conventional current flow” between the base terminal and its emitter terminal. The direction of the arrow always points from the positive P-type region to the negative N-type region for both transistor types, exactly the same as for the standard diode symbol.

Bipolar Transistor Configurations

As the Bipolar Transistor is a three terminal device, there are basically three possible ways to connect it within an electronic circuit with one terminal being common to both the input and output. Each method of connection responding differently to its input signal within a circuit as the static characteristics of the transistor vary with each circuit arrangement.

  • • Common Base Configuration   –   has Voltage Gain but no Current Gain.
  • • Common Emitter Configuration   –   has both Current and Voltage Gain.
  • • Common Collector Configuration   –   has Current Gain but no Voltage Gain.

The Common Base (CB) Configuration

As its name suggests, in the Common Base or grounded base configuration, the BASE connection is common to both the input signal AND the output signal with the input signal being applied between the base and the emitter terminals. The corresponding output signal is taken from between the base and the collector terminals as shown with the base terminal grounded or connected to a fixed reference voltage point.

The input current flowing into the emitter is quite large as its the sum of both the base current and collector current respectively therefore, the collector current output is less than the emitter current input resulting in a current gain for this type of circuit of “1” (unity) or less, in other words the common base configuration “attenuates” the input signal.

The Common Base Transistor Circuit

common base configuration


This type of amplifier configuration is a non-inverting voltage amplifier circuit, in that the signal voltages Vin and Vout are “in-phase”. This type of transistor arrangement is not very common due to its unusually high voltage gain characteristics. Its output characteristics represent that of a forward biased diode while the input characteristics represent that of an illuminated photo-diode.

Also this type of bipolar transistor configuration has a high ratio of output to input resistance or more importantly “load” resistance ( RL ) to “input” resistance ( Rin ) giving it a value of “Resistance Gain”. Then the voltage gain ( Av ) for a common base configuration is therefore given as:

Common Base Voltage Gain

common base transistor gain

Where: Ic/Ie is the current gain, alpha ( α ) and RL/Rin is the resistance gain.

The common base circuit is generally only used in single stage amplifier circuits such as microphone pre-amplifier or radio frequency ( Rf ) amplifiers due to its very good high frequency response.

The Common Emitter (CE) Configuration

In the Common Emitter or grounded emitter configuration, the input signal is applied between the base, while the output is taken from between the collector and the emitter as shown. This type of configuration is the most commonly used circuit for transistor based amplifiers and which represents the “normal” method of bipolar transistor connection.

The common emitter amplifier configuration produces the highest current and power gain of all the three bipolar transistor configurations. This is mainly because the input impedance is LOW as it is connected to a forward biased PN-junction, while the output impedance is HIGH as it is taken from a reverse biased PN-junction.

The Common Emitter Amplifier Circuit

common emitter configuration


In this type of configuration, the current flowing out of the transistor must be equal to the currents flowing into the transistor as the emitter current is given as Ie = Ic + Ib.

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As the load resistance ( RL ) is connected in series with the collector, the current gain of the common emitter transistor configuration is quite large as it is the ratio of Ic/Ib. A transistors current gain is given the Greek symbol of Beta, ( β ).

As the emitter current for a common emitter configuration is defined as Ie = Ic + Ib, the ratio of Ic/Ie is called Alpha, given the Greek symbol of α. Note: that the value of Alpha will always be less than unity.

Since the electrical relationship between these three currents, Ib, Ic and Ie is determined by the physical construction of the transistor itself, any small change in the base current ( Ib ), will result in a much larger change in the collector current ( Ic ).

Then, small changes in current flowing in the base will thus control the current in the emitter-collector circuit. Typically, Beta has a value between 20 and 200 for most general purpose transistors. So if a transistor has a Beta value of say 100, then one electron will flow from the base terminal for every 100 electrons flowing between the emitter-collector terminal.

By combining the expressions for both Alpha, α and Beta, β the mathematical relationship between these parameters and therefore the current gain of the transistor can be given as:

bipolar transistor alpha beta relationship

common emitter current gain

Where: “Ic” is the current flowing into the collector terminal, “Ib” is the current flowing into the base terminal and “Ie” is the current flowing out of the emitter terminal.

Then to summarise a little. This type of bipolar transistor configuration has a greater input impedance, current and power gain than that of the common base configuration but its voltage gain is much lower. The common emitter configuration is an inverting amplifier circuit. This means that the resulting output signal is 180o “out-of-phase” with the input voltage signal.

The Common Collector (CC) Configuration

In the Common Collector or grounded collector configuration, the collector is now common through the supply. The input signal is connected directly to the base, while the output is taken from the emitter load as shown. This type of configuration is commonly known as a Voltage Follower or Emitter Follower circuit.

The common collector, or emitter follower configuration is very useful for impedance matching applications because of the very high input impedance, in the region of hundreds of thousands of Ohms while having a relatively low output impedance.

The Common Collector Transistor Circuit

common collector configuration


The common emitter configuration has a current gain approximately equal to the β value of the transistor itself. In the common collector configuration the load resistance is situated in series with the emitter so its current is equal to that of the emitter current.

As the emitter current is the combination of the collector AND the base current combined, the load resistance in this type of transistor configuration also has both the collector current and the input current of the base flowing through it. Then the current gain of the circuit is given as:

The Common Collector Current Gain

common collector gain

Common Collector Current Gain

This type of bipolar transistor configuration is a non-inverting circuit in that the signal voltages of Vin and Vout are “in-phase”. It has a voltage gain that is always less than “1” (unity). The load resistance of the common collector transistor receives both the base and collector currents giving a large current gain (as with the common emitter configuration) therefore, providing good current amplification with very little voltage gain.

We can now summarise the various relationships between the transistors individual DC currents flowing through each leg and its DC current gains given above in the following table.

Relationship between DC Currents and Gains

transistor currents transistor alpha and beta equations
transistor base currents
transistor collector currents transistor emitter currents

Bipolar Transistor Summary

Then to summarise, the behaviour of the bipolar transistor in each one of the above circuit configurations is very different and produces different circuit characteristics with regards to input impedance, output impedance and gain whether this is voltage gain, current gain or power gain and this is summarised in the table below.

Bipolar Transistor Configurations

bipolar transistor configurations

with the characteristics of the different transistor configurations given in the following table:

Characteristic Common
Input Impedance Low Medium High
Output Impedance Very High High Low
Phase Angle 0o 180o 0o
Voltage Gain High Medium Low
Current Gain Low Medium High
Power Gain Low Very High Medium

In the next tutorial about Bipolar Transistors, we will look at the NPN Transistor in more detail when used in the common emitter configuration as an amplifier as this is the most widely used configuration due to its flexibility and high gain. We will also plot the output characteristics curves commonly associated with amplifier circuits as a function of the collector current to the base current.


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40 Responses to “Bipolar Transistor”

    • Sunny sinha

      emitter is heavely doped, so that max. charge carrier should reach the collector terminal.On the other hand collector is moderately doped.

  1. james


    -Why is theoretical value of gain always different from the experimental value in common collector and common emitter?
    – Why is there difference in low cut-off frequency from theoretical and experimental?

    Thank you for the help.

    • surya

      The theoretical values we will considered under conventional way during the calculation to get the rough idea of behaviour of any devices by supperssing all the real time measures as well as quantities.

      Not only in the case of CE or CC amplifier, this exists in every corner.

      In the case of practical, fisrt of all we dont think about the things we have suppressed during the theoretical calculation.
      Simply we assuming the ideal conditions only.
      Almost we will suppress the critical factors that we can not deal really:

      1.Exact characteristics of the device( No two devices are same those are made from the same machine with same parameter in a same process.In the sense, for example Let us consider BC 547, in this we simply go for data sheet for the reference, but the actual picture of the theory and the practical behavior of the transistor during stimulus is very different).i.e transistor, resistor, connecting wires, even voltage regulator etc.
      2. Doping Concentration difference.
      2. Atmosperic conditions.( radition/ interference)
      3.Temperature of the device.
      4.Temperature of casing.
      5. heat dissipation of Transistor, resistor, voltage regulator(Zener/IC regulator).(Power rating of individual components)
      6. Input supply frequency fluctuation.
      7. Stabilization Point
      8. Change in Miller capacitance of transistor for base-Emitter, Base – collector.
      etc , there are so many things we will suppress during the theoretical calc., that is the reason we can never get such exact values when we go for practical.

      Very simple concept : just think about the concepts tolerance, accuracy and error concepts.
      Also, Keep in mind- Laws of conservation of energy.

      Hope it is helpful.

  2. Sidhu Burre

    Can you please clarify my question. Why transistor pin is grounded either Emitter, Base or Collector

    • john

      common emitter has high input impedance. It can not amplify at frequencies of the common base. The common emitter collector feeds back to the base out of phase through capacitance. Power a speaker with common collector. test bills post

  3. ante

    First, to clarify that the Av is the ratio of the output voltage (on the emitter resistor Re) and SIGNAL SOURCE voltage, which is divided between a relatively low resistance Rbe and emitter resistor Re. In addition, the current flows through Rbe is Ib, input current of the junction, and the Re flowing current is Ie=(1+hfe)×Ib, many times higher than Ib.
    So, Uin = Ib Rbe + (1 + hfe) Ib ×Re, and Vout = Ie ×Re = (1 + hfe)× Ib ×Re. Av is approximately 1!
    You Got It?

  4. lyz

    Can you explain why the common collector has “very little voltage gain”? I ask because the current gain is large because both the currents from base and collector are going to the emitter which is in series with the output resistor RL. Then according to Ohm’s law: V=IR, if current goes higher then voltage must go higher. So how come large current gain but not large voltage gain?

    • Wayne Storr

      Voltage and current gain has everything to do with the transistor and nothing to do with load resistor RL. The emitter follower configuration has high input impedance and low output impedance making it a good current amplifier but a poor voltage amplifier. Then its current gain, (Ai = Iout/Iin) is high and its voltage gain, (Av = Vout/Vin) is low, close to unity. Also because its voltage gain is low, its power gain, (Ap = AvAi) will also be low.


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